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ML412PJB KSR1005 PEB3065 N4005 BZG03C4X IL216AT BSS145 7N80C
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  n - c h a n n e l e n h a n c e m e n t m o d e m o s f e t c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - a p r . , 2 0 0 5 w w w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . a p m 2 0 5 4 n v apm2054n handling code temp. range package code package code v : sot-223 operating junction temp. range c : -55 to 150 c handling code tu : tube tr : tape & reel lead free code l : lead free device blank : original device apm2054n v : apm2054n xxxxx xxxxx - date code lead free code p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n f e a t u r e s a p p l i c a t i o n s 2 0 v / 5 a , r d s ( o n ) = 3 5 m w ( t y p . ) @ v g s = 1 0 v r d s ( o n ) = 4 5 m w ( t y p . ) @ v g s = 4 . 5 v r d s ( o n ) = 1 1 0 m w ( t y p . ) @ v g s = 2 . 5 v s u p e r h i g h d e n s e c e l l d e s i g n r e l i a b l e a n d r u g g e d l e a d f r e e a v a i l a b l e ( r o h s c o m p l i a n t ) s w i t c h i n g r e g u l a t o r s s w i t c h i n g c o n v e r t e r s t o p v i e w o f s o t - 2 2 3 n - c h a n n e l m o s f e t g s d (3) (2) (1) n o t e : a n p e c l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e t i n p l a t e t e r m i n a t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s a n d c o m p a t i b l e w i t h b o t h s n p b a n d l e a d - f r e e s o l d i e r i n g o p e r a t i o n s . a n p e c l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j s t d - 0 2 0 c f o r m s l c l a s s i f i c a t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e .
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - a p r . , 2 0 0 5 w w w . a n p e c . c o m . t w 2 a p m 2 0 5 4 n v symbol parameter rating unit v dss drain - source voltage 20 v gss gate - source voltage 16 v i d * continuous drain current 5 i dm * pulsed drain current v gs = 10 v 20 a i s * diode continuous forward current 3 a t j maximum junction temperature 150 t stg s torage temperature range - 55 to 150 c t a =25 c 1.47 p d * power dissipation for single operation t a =100 c 0.58 w r q ja * thermal resistance - junction to ambient 85 c / w note : *surface mounted on 1in 2 pad area, t 10sec. apm 2054 n v symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds =250 m a 20 v v ds = 16 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs(th) gate threshold voltage v ds =v gs , i ds =250 m a 0.6 0.9 1.5 v i gss gate leakage current v gs = 16 v, v ds =0v 100 na v gs = 10 v, i ds = 5 a 35 40 v gs = 4.5 v, i ds = 3.5 a 45 54 r ds(on) a drain - source on - state resistance v gs = 2. 5v, i ds = 2.5 a 110 130 m w v sd a diode forward voltage i sd = 3 a, v gs =0v 0.85 1.3 v gate charge characteristics b q g total gate charge 11 13 q gs gate - source charge 3. 8 q gd gate - drain charge v ds =1 0 v, v gs = 4.5 v, i d s = 6 a 5.2 nc e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) a b s o l u t e m a x i m u m r a t i n g s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d )
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - a p r . , 2 0 0 5 w w w . a n p e c . c o m . t w 3 a p m 2 0 5 4 n v apm 2054 n v symbol parameter test condition min. typ. max. unit dynamic characteristics b t d(on) turn - on delay time 7 10 t r turn - on rise time 15 25 t d(off) turn - off delay time 19 26 t f turn - off fall time v dd =1 0 v, r l =1 0 w , i d s =1a, v gen = 4.5v , r g =6 w 6 7 ns r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 2.5 w c iss input capacitance 450 c oss output capacitance 100 c rss reverse transfer capacitance v gs =0v, v ds =20v, f requency =1.0mhz 60 pf notes: a : pulse test ; pulse width 3 00 m s, duty cycle 2% . b : guaranteed by design, not subject to production testing . e l e c t r i c a l c h a r a c t e r i s t i c s ( c o n t . ) ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d )
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - a p r . , 2 0 0 5 w w w . a n p e c . c o m . t w 4 a p m 2 0 5 4 n v t y p i c a l c h a r a c t e r i s t i c s p o w e r d i s s i p a t i o n p tot - power (w) t j - j u n c t i o n t e m p e r a t u r e ( c ) i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a v d s - d r a i n - s o u r c e v o l t a g e ( v ) i d - drain current (a) normalized transient thermal resistance t h e r m a l t r a n s i e n t i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t a =25 o c 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 t a =25 o c,v g =10v 0.1 1 10 60 0.01 0.1 1 10 100 100ms rds(on) limit 300 m s t a =25 o c 1s 1ms 10ms dc 1e-4 1e-3 0.01 0.1 1 10 100 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r q ja :85 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - a p r . , 2 0 0 5 w w w . a n p e c . c o m . t w 5 a p m 2 0 5 4 n v v d s - d r a i n - s o u r c e v o l t a g e ( v ) i d - drain current (a) o u t p u t c h a r a c t e r i s t i c s r ds(on) - on - resistance (m w ) d r a i n - s o u r c e o n r e s i s t a n c e i d - d r a i n c u r r e n t ( a ) t r a n s f e r c h a r a c t e r i s t i c s v g s - g a t e - s o u r c e v o l t a g e ( v ) i d - drain current (a) t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e normalized threshold vlotage t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 18 20 2v 3v v gs = 4, 5, 6, 7, 8, 9, 10v 0 4 8 12 16 20 0 20 40 60 80 100 120 140 160 v gs =10v v gs =4.5v v gs =2.5v 0 1 2 3 4 5 0 2 4 6 8 10 12 14 16 18 20 t j =125 o c t j =25 o c t j =-55 o c -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds =250 m a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - a p r . , 2 0 0 5 w w w . a n p e c . c o m . t w 6 a p m 2 0 5 4 n v d r a i n - s o u r c e o n r e s i s t a n c e normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) v s d - s o u r c e - d r a i n v o l t a g e ( v ) s o u r c e - d r a i n d i o d e f o r w a r d i s - source current (a) v d s - d r a i n - s o u r c e v o l t a g e ( v ) c - capacitance (pf) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c h a r g e ( n c ) v gs - gate-source voltage (v) t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 r on @t j =25 o c: 35m w v gs = 10v i ds = 5a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 20 t j =25 o c t j =150 o c 0 4 8 12 16 20 0 100 200 300 400 500 600 700 frequency=1mhz crss coss ciss 0 4 8 12 16 20 24 0 1 2 3 4 5 6 7 8 9 10 v ds =10v i d = 5a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - a p r . , 2 0 0 5 w w w . a n p e c . c o m . t w 7 a p m 2 0 5 4 n v millimeters inches dim min. max. min. max. a 1.40 1.60 0.055 0.063 b 0.40 0.56 0.016 0.022 b1 0.35 0.48 0.014 0.019 c 0.35 0.44 0.014 0.017 d 4.40 4.60 0.173 0.181 d1 1.35 1.83 0.053 0.072 e 1.50 bsc 0.059 bsc e1 3.00 bsc 0.118 bsc e 2.29 2.60 0 .090 0.102 h 3.75 4.25 0.148 0.167 l 0.80 1.20 0.031 0.047 a 10 10 p a c k a g i n g i n f o r m a t i o n s o t - 8 9 ( r e f e r e n c e e i a j e d - 7 5 0 0 a r e g i s t r a t i o n s c - 6 2 ) d d1 e b1 e1 b 1 2 3 l h e a a c a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - a p r . , 2 0 0 5 w w w . a n p e c . c o m . t w 8 a p m 2 0 5 4 n v millimeters inches dim min. max. min. a 1.50 1.80 a 1.50 a1 0.02 0.08 a1 0.02 b 0.60 0.80 b 0.60 b1 2.90 3.10 b1 2.90 c 0.28 0.32 c 0.28 d 6.30 6.70 d 6.30 e 2.3 bsc 0.09 bsc e1 4.6 bsc 0.18 bsc h 6.70 7.30 h 6.70 l 0.91 1.10 l 0.91 k 1.50 2. 00 k 1.50 a 0 10 a 0 b 13 13 p a c k a g i n g i n f o r m a t i o n s o t - 2 2 3 ( r e f e r e n c e j e d e c r e g i s t r a t i o n s o t - 2 2 3 ) 1.5 typ [0.06] 1 typ [0.04] 2.3 [0.092] 3.3 [0.132] 1.5 [0.06] 6.3 [0.252] a c l a 1 b b a b 1 d h e k e e 1 land pattern recommendation controlling dimension is millimeters values in [ ] are inch
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - a p r . , 2 0 0 5 w w w . a n p e c . c o m . t w 9 a p m 2 0 5 4 n v p h y s i c a l s p e c i f i c a t i o n s t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 temperature time critical zone t l to t p terminal material solder - plated copper (solder material : 90/10 or 63/37 snpb) , 100%sn lead solderability meets eia specification rsi86 - 91, ansi/j - std - 002 category 3. r e f l o w c o n d i t i o n ( i r / c o n v e c t i o n o r v p r r e f l o w ) c l a s s i f i c a t i o n r e f l o w p r o f i l e s profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat - temperature min (tsmin) - temperature max (tsmax) - time (min to max) (ts) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 180 seconds time maintained above: - temperature (t l ) - time (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak /classificatioon temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10 - 30 seconds 20 - 40 seconds ramp - down rate 6 c/se cond max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. notes: all temperatures refer to topside of the package .measured on the body surface.
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - a p r . , 2 0 0 5 w w w . a n p e c . c o m . t w 1 0 a p m 2 0 5 4 n v test item method description solderability mil-std-883d-2003 245c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125c pct jesd-22-b, a102 168 hrs, 100% rh, 121c tst mil-std 883d-1011.9 -65c ~ 150c, 200 cycles c a r r i e r t a p e & r e e l d i m e n s i o n s t ao e w po p ko bo d1 d f p1 r e l i a b i l i t y t e s t p r o g r a m table 2. pb - free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 - 2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 3 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. table 1. snpb entectic process ? package peak reflow temperature s package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 240 +0/ - 5 c 225 +0/ - 5 c 3 2.5 mm 225 +0/ - 5 c 225 +0/ - 5 c c l a s s i f i c a t i o n r e f l o w p r o f i l e s ( c o n t . )
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 2 - a p r . , 2 0 0 5 w w w . a n p e c . c o m . t w 1 1 a p m 2 0 5 4 n v application a b c j t1 t2 w p e 330 3 100 2 13 0. 5 2 0.5 16.4 + 0.3 -0.2 2.5 0.5 16+ 0.3 - 0.1 8 0.1 1.75 0.1 f d d1 po p1 ao bo ko t to-252 7.5 0.1 1.5 +0.1 1.5 0.25 4.0 0.1 2.0 0.1 6.8 0.1 10.4 0.1 2.5 0.1 0.3 0.05 application carrier width cover tape width devices per reel to- 252 16 13.3 2500 c u s t o m e r s e r v i c e a n p e c e l e c t r o n i c s c o r p . h e a d o f f i c e : 5 f , n o . 2 l i - h s i n r o a d , s b i p , h s i n - c h u , t a i w a n , r . o . c . t e l : 8 8 6 - 3 - 5 6 4 2 0 0 0 f a x : 8 8 6 - 3 - 5 6 4 2 0 5 0 t a i p e i b r a n c h : 7 f , n o . 1 3 7 , l a n e 2 3 5 , p a c c h i a o r d . , h s i n t i e n c i t y , t a i p e i h s i e n , t a i w a n , r . o . c . t e l : 8 8 6 - 2 - 8 9 1 9 1 3 6 8 f a x : 8 8 6 - 2 - 8 9 1 9 1 3 6 9 c o v e r t a p e d i m e n s i o n s c a r r i e r t a p e & r e e l d i m e n s i o n s ( c o n t . ) a j b t2 t1 c ( m m )


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